http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105699920-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_08f13af9eed1607b6583a1306d9a1294 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R33-093 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R33-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 |
| filingDate | 2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e93eb0a17f1e3ff0768c2a05a4767d48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5aa87c5aed991f7fb5cd95d7e3502bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13147f7849151537e4852d82e75ffe89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2844acbed6ea70520babda79b4aa7fe3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5472a834b8e661ed044016302ba03e06 |
| publicationDate | 2016-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105699920-A |
| titleOfInvention | An area array giant magnetoresistive magnetic sensor and its manufacturing method |
| abstract | The invention discloses an area array giant magnetoresistance magnetic sensor and a manufacturing method thereof, comprising a data acquisition and processing unit and a giant magnetoresistance array. The data acquisition and processing unit includes a power module, an address selector, an analog front end and an analog-to-digital converter; the power module is connected to the giant magnetoresistive array through the address selector, and the giant magnetoresistance The resistive array includes 256 giant magnetoresistive magnetic sensors in the form of meandering resistors with a nano-multilayer film structure, forming a giant magnetoresistive array in the form of a 16*16 area array. The present invention is based on the standard CMOS integrated circuit technology. First, the external data acquisition and processing unit circuit is separately processed. After the external circuit is processed, the giant magnetoresistive array is processed by two-step photolithography. The area array giant magnetoresistive magnetic sensor of the invention can realize accurate high-speed synchronous detection of the planar magnetic field, and is miniaturized, highly integrated, compatible with product technology, and convenient for mass production. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112289924-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112289924-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022095711-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111398879-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021022640-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114509563-A |
| priorityDate | 2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.