http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105699871-B
Outgoing Links
Predicate | Object |
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classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate | 2014-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-105699871-B |
titleOfInvention | MOSFET electric heating Method In The Whole-process Analysis under high-power electromagnetic impulse action |
abstract | The invention discloses MOSFET electric heating Method In The Whole-process Analysis under a kind of high-power electromagnetic impulse action.This method uses time domain spectral element method to solve drift-diffusion equation group first, finds out MOSFET carrier concentration and Potential Distributing instantaneous under high power pulse effect, obtains the electric field strength and current density at current time.Heat source inside hypothesized model only has joule heat source, considers the influence of ambient temperature and thermal convection, obtains the Temperature Distribution of current time each point.The electric pulse field parameters such as carrier mobility are updated according to temperature change.It recycles repeatedly, until drift-diffusion equation group meets convergence precision, field distribution and heat distribution at this time is exactly the electric heating distribution inside the current time MOSFET that should be asked.The analysis method, which destroys the anti-high power of the semiconductor devices such as research MOSFET, has extremely important realistic meaning. |
priorityDate | 2014-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414861186 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7181 |
Total number of triples: 11.