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filingDate 2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32bcc9de0a95b5c6ddd872edb36e6586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44b7bf20e5029034db5ad85caa44dfe5
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publicationDate 2016-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105699331-A
titleOfInvention Optical waveguide sensing chip, preparation method and application thereof
abstract The invention discloses an optical waveguide sensing chip, a preparation method and an application thereof. The preparation method comprises the following steps: 1) preparing a gold film on a substrate material, thereby acquiring a gold film base, and then treating the gold film base by soaking into a sulfydryl silane solution for treating and then treating with an acid solution, or soaking into a sulfydryl alkanol solution for treating; 2) directly soaking the gold film base into a solution under the temperature at 60-70 DEG C, standing for 48-120h till forming a silicon dioxide film in required thickness, wherein the solution is a mixed solution of cetyl trimethyl ammonium bromide, water, ethanol, 25% stronger ammonia water and tetraethoxysilane, the volume ratio of ethanol to water to stronger ammonia water to tetraethoxysilane is (18-20):(30-32): (0.004-0.032):(0.032-0.048) and each 50mL mixed solution contains 0.08-0.12g of cetyl trimethyl ammonium bromide; and 3) drying. The preparation method provided by the invention has the advantages that the preparation process is simple and the thickness of the generated silicon dioxide film can be easily controlled so as to achieve ultrahigh sensitivity.
priorityDate 2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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