http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105679646-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105679646-B |
| titleOfInvention | Method for crystallising, semiconductor devices and its manufacturing method of oxide semiconductor layer |
| abstract | Method for crystallising, semiconductor devices and its manufacturing method of oxide semiconductor layer.Disclosed oxide semiconductor method for crystallising may include following steps：While substrate to be heated to 200 DEG C to 300 DEG C of temperature, In Ga Zn oxides are deposited on the substrate；And the In Ga Zn oxides deposited are heat-treated, to form the oxide semiconductor layer through the crystallization of its whole thickness. |
| priorityDate | 2014-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.