http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105655334-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2011-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105655334-B |
| titleOfInvention | Semiconductor device with integrated multiple gate-dielectric transistors |
| abstract | It describes with different gate and the transistor based on fin of two or more types that is formed on single integrated circuit.The gate structure of each type of transistor is distinguished at least through the ingredient of (multiple) workfunction layers in the thickness or ingredient or gate electrode of (multiple) gate dielectric layer.The method for manufacturing the integrated circuit at least two different types of transistors based on fin is additionally provided, wherein the thickness and ingredient of the workfunction metal in the thickness and ingredient and/or gate electrode that pass through (multiple) gate dielectric layer distinguish the transistor types. |
| priorityDate | 2011-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.