| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-42388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1244 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate |
2014-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-105637637-B |
| titleOfInvention |
Semiconductor device |
| abstract |
The semiconductor device (1001) includes: a first transistor (10A) having a first channel length L1 and a first channel width W1; and a second transistor (10B) having a second channel length L2 and a second channel width The track width is W2, the first transistor (10A) and the second transistor (10B) have an active layer formed of a common oxide semiconductor film, and the first transistor (10A) can depend on the drain current Isd from the gate voltage Vg In a memory transistor in the resistive state in which the drain current Isd irreversibly changes from the semiconductor state to the gate voltage Vg independent, the first channel length L1 is smaller than the second channel length L2. |
| priorityDate |
2013-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |