| abstract |
The semiconductor device (1001) includes: a first transistor (10A) having a first channel length L1 and a first channel width W1; and a second transistor (10B) having a second channel length L2 and a second channel width The track width is W2, the first transistor (10A) and the second transistor (10B) have an active layer formed of a common oxide semiconductor film, and the first transistor (10A) can depend on the drain current Isd from the gate voltage Vg In a memory transistor in the resistive state in which the drain current Isd irreversibly changes from the semiconductor state to the gate voltage Vg independent, the first channel length L1 is smaller than the second channel length L2. |