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filingDate 2014-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3f55c8987a56820657dc48e47e6481d
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publicationDate 2016-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105636932-A
titleOfInvention Amine precursors for the deposition of graphene
abstract The present invention relates to amine precursors of the formula I: (X 1 -R 1 ) n -NH (3-n) (I) or ammonium salts thereof deposited by chemical vapor deposition (CVD) on a substrate S1 having a weight of 0 to 65 The purposes in the graphene film of the nitrogen content of %, wherein R 1 is selected from (a) C 1 to C 10 alkanediyl, it all can be optionally by at least one interval of O, NH and NR , ( b) Alkenediyl , all of which can be optionally interrupted by at least one of O, NH, and NR, (c) alkynediyl , which can all be optionally interrupted by at least one of O, NH, and NR, (d) C 6 to C 20 aromatic divalent moiety, and (e) CO and CH 2 CO, X 1 is selected from H, OH, OR 2 , NH 2 , NHR 2 or NR 2 2 , wherein two groups X 1 may together form a divalent group X2 selected from a chemical bond, O, NH or NR2 , R2 selected from C1 to C10 alkyl and C6 to C20 aromatic moieties, which may optionally be replaced by one or Multiple substituents X 1 are substituted, and n is 1, 2 or 3.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110282617-A
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priorityDate 2013-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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