http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105633167-B

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filingDate 2015-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105633167-B
titleOfInvention Semiconductor device with high-quality epitaxial layer and method of making the same
abstract Semiconductor devices with high-quality epitaxial layers and methods of making the same are disclosed. According to an embodiment, a semiconductor device may include: a substrate; a fin-shaped first semiconductor layer spaced apart from the substrate; a second semiconductor layer at least partially surrounding the periphery of the first semiconductor layer; an isolation layer formed on the substrate, isolating The layer at least partially exposes the second semiconductor layer, the exposed second semiconductor layer extending in a fin shape; and a gate stack formed on the isolation layer and intersecting the second semiconductor layer.
priorityDate 2015-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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