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filingDate 2014-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105611986-B
titleOfInvention Method for purifying semiconductor single-walled carbon
abstract A kind of two steps sc SWCNT enrichment methods are related to based on the first step that making choice property of semiconductor SWCNT is disperseed and extracted using conjugated polymer, after but based on adsorption process second step, the product of the first step is wherein set to combine metal SWCNT exposed to inorganic absorbent medium with substantial selectivity, so that the still scattered further enriched semiconductor SWCNT of thing in the solution.The method easily can be used for the enrichment with the major diameter semiconductor single-walled carbon (sc SWCNT) in e.g., from about 0.6nm to the average diameter of 2.2nm scopes by bi-directional scaling.The first step produces the sc SWCNT dispersion liquids of the enrichment with medium sc purity (98%) with high yield, or the sc SWCNT dispersion liquids of the enrichment with high-purity (99% and higher) are produced with low-yield.The second step can not only improve the purity of the sc SWCNT by polymer rich with medium purity, but also can further lift the highly purified sample and arrive ultrapure level.Therefore, this two-step mixing process provide sc SWCNT materials with ultra-high purity and high sc purity (being greater than 99%) and high yield (be up to about 20% or higher) both.
priorityDate 2013-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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