http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105609565-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2010-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105609565-B |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | An object is to provide a highly reliable thin film transistor including an oxide semiconductor film having stable electrical characteristics. The channel length of the thin film transistor including the oxide semiconductor film is in the range of 1.5 μm to 100 μm (both ends inclusive), preferably 3 μm to 10 μm (both ends inclusive); when the amount of change in threshold voltage is from room temperature to 180° C. A semiconductor device with stable electrical characteristics can be manufactured at 3V or less, preferably 1.5V or less, in an operating temperature range of -25°C to -150°C (both ends inclusive) or -25°C inclusive. Specifically, in a display device which is an example of a semiconductor device, display unevenness due to variation in threshold voltage can be reduced. |
| priorityDate | 2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.