http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105579618-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-16 |
| filingDate | 2014-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105579618-B |
| titleOfInvention | Etching agent composite and the method for forming metal line and thin film transistor substrate using it |
| abstract | Etching agent composite according to an embodiment of the invention includes：Total weight based on etching agent composite, the persulfate of 0.5wt% to 20wt%, the fluorine compounds of 0.01wt% to 1wt%, 1wt% to the inorganic acid of about 10wt%, the azoles of 0.01wt% to 2wt%, 0.1wt% to the chlorine compound of 5wt%, the mantoquita of 0.05wt% to 3wt%, 0.01wt% to the antioxidant of 5wt% or its salt and water so that the total weight of etching agent composite to 100wt%.The etching agent composite can be used for forming metal line or manufacture thin film transistor substrate by the way that etching includes the metal film of copper. |
| priorityDate | 2013-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 110.