http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105573069-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69c511954e9d43925a40036ee50d1fa7 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
filingDate | 2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b778749e0bf49feff52fa50329c0177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d6767cd21100345b477f41115ab42f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fcd93ca5ae900f1f80d5361153e779d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1020872e6f3615206bb8ea433809273 |
publicationDate | 2016-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-105573069-A |
titleOfInvention | Photoresist cleanout fluid |
abstract | The invention discloses cleanout fluid for removing photoresist residues. The cleanout fluid contains alcohol amine, solvent, C4-C6 polyhydric alcohol and a nitrogen thiazole derivative. The cleanout fluid for removing the photoresist residues can remove the photoresist residues on wafers more effectively, does not contain water, hydroxylamine and fluoride, has the extremely low corrosivity on metallic copper, metallic aluminum and the like, has the very good water resistance and has the good application prospect in the fields of semiconductor wafer cleaning and the like. |
priorityDate | 2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 139.