| abstract |
The invention discloses a horizontal array of ultra-high-density single-wall carbon nanotubes and a preparation method thereof. The method comprises the following steps: loading a catalyst on a single crystal growth substrate, and after annealing, passing hydrogen gas into a chemical vapor deposition system to carry out the reduction reaction of the catalyst, and maintaining the flow of hydrogen gas to carry out orientation of single-walled carbon nanotubes Grow and get. The method prepares a horizontal array of ultra-high-density single-walled carbon nanotubes with a density exceeding 130 pieces/micron, which is the horizontal array of single-walled carbon nanotubes with the highest direct growth density reported in the world. The electrical performance test of the ultra-high-density single-walled carbon nanotube horizontal array prepared by the present invention shows that the on-current density reaches 380 μA/μm, and the transconductance reaches 102.5 μS/μm, which are the highest among carbon nanotube field effect transistors in the world at present. Level. |