http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105552205-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0bc05af7739d6324cb919a0bde0cc625 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D9-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D9-04 |
| filingDate | 2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11a5e526fc1974a6155e7330f8864046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_699c54bf9a9d755dffdde70cd219459a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9ba9253d3077ad0aed2947dbee694f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57e109d458f23ee2823dd89575939a33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d88892214b46594518f1e836958a45 |
| publicationDate | 2016-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105552205-A |
| titleOfInvention | A method for preparing bismuth selenide thermoelectric thin film with bismuth chloride |
| abstract | A method for preparing a bismuth selenide thermoelectric thin film by using bismuth chloride belongs to the technical field of thermoelectric thin film material preparation. The invention is obtained through the following steps. Firstly, the tin dioxide conductive glass substrate is cleaned, and then BiCl 3 and SeO 2 are put into dilute In nitric acid, use the electrodeposition method to obtain the precursor film on the conductive glass sheet, dry it naturally, put it into a tube furnace with hydrazine hydrate, so that the precursor film sample does not contact with hydrazine hydrate, and place it in a closed tube furnace heating, and finally take out the sample for drying to obtain bismuth selenide thermoelectric thin film. The invention does not require high vacuum conditions, has low requirements on instruments and equipment, low production cost, high production efficiency and is easy to operate. The obtained bismuth selenide thermoelectric thin film has good continuity and uniformity, and the main phase is Bi 2 Se 3 phase, which can realize low-cost large-scale industrial production. |
| priorityDate | 2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.