| abstract |
The invention discloses a thin film transistor based on an amorphous oxide semiconductor material and a preparation method thereof. The thin film transistor comprises a substrate, a gate, a gate insulating layer, an active layer, source and drain electrodes and a passivation layer from bottom to top; the active layer is an amorphous oxide SiSnO thin film as the active layer. The invention is based on the back channel etching type thin film transistor structure, and introduces amorphous tin silicon oxide SiSnO as the active layer. The oxide has strong etching resistance, can greatly reduce the damage to the back channel of the thin film transistor during the process of etching the source and drain electrodes, and has a better threshold voltage. The stability of the back channel etching type thin film transistor produced by the invention is greatly improved, which meets the requirement of commercialization of the thin film transistor, and thus has high application value. |