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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
filingDate 2015-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105514261-B
titleOfInvention A magnetic storage device for MRAM
abstract The present invention relates to a magnetoresistive random access memory (MRAM), in particular to a magnetoresistance random access memory device which utilizes a ferrimagnetic material to form a pinned layer to reduce the coupling magnetic field distribution between the free layer and the pinned layer, including: a ferromagnetic free layer , an isolation layer, and a fixed layer containing ferrimagnetism. The isolation layer is composed of a non-magnetic material and is located between the ferromagnetic free layer and the fixed layer containing ferrimagnetism. The magnetic compensation temperature of the fixed layer containing ferrimagnetism is the same as that of the MRAM The working temperature matches the magnetic compensation temperature, and the magnetic moment of the fixed layer containing ferrimagnetism is close to zero at the magnetic compensation temperature. The beneficial effect of the present invention is that: using the ferrimagnetic material as the pinned layer, the coupled magnetic field generated by it acting on the free layer has almost nothing to do with the size of the pinned layer, so the distribution of the coupled magnetic field in the magnetic storage device array can be effectively reduced. The invention has great significance to the preparation and production of MRAM and has great application prospects.
priorityDate 2015-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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