abstract |
The invention provides a heat dissipation system and construction method based on a graphene composite material/silicon nitride/silicon chip multilayer structure, which belongs to the heat dissipation technology of microelectronic devices. The heat dissipation structure includes a silicon-based heat generating device, a Si 3 N 4 insulating layer, a graphene composite material heat sink and a substrate. Among them, a dense Si 3 N 4 insulating layer is deposited on the back of the silicon wafer by chemical vapor deposition, and the graphene composite material is interconnected with the Si 3 N 4 insulating layer through chemical bonds. The substrates are connected and packaged into devices. The invention utilizes chemical bonds to interconnect silicon-based heating devices, thermal interface materials, and heat sinks, greatly reducing the layer spacing of each device, avoiding thermal resistance caused by interlayer micro-gap, promoting phonon heat transfer, and improving overall heat dissipation The heat dissipation capability of the system enables the chip to work in harsh high-temperature environments. And after packaging, the overall system is lighter and thinner, which is in line with the development trend of contemporary semiconductor devices. |