http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105483828-B

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
filingDate 2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105483828-B
titleOfInvention A kind of preparation method for improving gallium nitride quality
abstract The invention belongs to inorganic compound semiconductor Material Field, more particularly to a kind of preparation method for improving gallium nitride quality.Gallium salt and nucleation derivant are dispersed in polyvinyl alcohol water solution first, add in Aqueous Adhesives high-speed stirred, gallium salt and nucleation derivant is made to be coated in the gel network structure of polyvinyl alcohol formation, high-pressure homogeneous formation nano-composite gel again, obtained plural gel is coated uniformly on surface-treated Si substrates, it is placed in tube furnace in nitrogen atmosphere after drying, tubular type furnace temperature is increased to 850 ~ 1050 DEG C, it is passed through ammonia and reacts 90 ~ 110min, stop logical ammonia to be cooled to room temperature in nitrogen atmosphere, obtain the faint yellow gallium nitride of crystal form rule.The present invention is using gallium salt and is nucleated the composite Nano gel coating that derivant formed and prepares gallium nitride on a si substrate, makes that gallium nitride surface topography is good, crystal form is regular, yield is high, purity is high, is with a wide range of applications.
priorityDate 2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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