| abstract |
The present invention provides a kind of base plate processing system, ion implantation system and beamline ion implanters implant system.The base plate processing system of system, depositing system and etch system is e.g. ion implanted, is padded with coarse SiClx.Silicon liner is roughened with the chemical process that can produce detail characteristic, seems micro- pyramid, height can be less than 20 microns.This pyramid roughening feature more common than generally in graphite backing slightly is smaller, despite the fact that in this way, roughened silicon can retain the plated film of deposition and avoid peeling off. |