http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105448985-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2014-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105448985-B |
| titleOfInvention | Semiconductor devices and its manufacturing method |
| abstract | A kind of semiconductor devices, comprising: fin structure extends in a first direction distribution in substrate, and wherein the material of fin structure is III-V compound；Source region, channel region, drain region, at the top of the fin structure in, extend in a first direction distribution；Gate stack extends distribution in a second direction on channel region；Grid curb wall, in gate stack along the two sides of first direction.According to semiconductor devices and its manufacturing method of the invention, since substrate fine recesses epitaxial growth different materials device fin structure, boundary defect is inhibited to upwardly propagate in selecting suitable depth-to-width ratio groove, the reliability of device is improved, and effectively increases the channel region carrier mobility of device. |
| priorityDate | 2014-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.