http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105448948-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105448948-B |
| titleOfInvention | Resistive random access memory |
| abstract | The present invention provides a kind of resistive random access memory, including top electrode, lower electrode and the transformation metal oxide layer between upper and lower electrode.Above-mentioned resistive random access memory further includes the metallic cover layer above top electrode and the including transparent conducting oxide layer between the metallic cover layer and top electrode. |
| priorityDate | 2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.