| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-371
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 |
| filingDate |
2015-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-105448929-B |
| titleOfInvention |
non-volatile semiconductor storage device |
| abstract |
The present invention provides a nonvolatile semiconductor memory device capable of realizing excellent charge retention characteristics. The nonvolatile semiconductor memory device of the embodiment has: a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having Molecular structure of organic molecules. |
| priorityDate |
2014-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |