http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105448921-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11524 |
| filingDate | 2014-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105448921-B |
| titleOfInvention | A kind of semiconductor devices and preparation method thereof and electronic device |
| abstract | The invention discloses a kind of semiconductor devices and preparation method thereof and electronic devices, are sequentially formed with the first hard mask layer, the second hard mask layer, sacrificial layer and third hard mask layer on a semiconductor substrate；Etching technics is executed to form shallow trench；Spacer material layer is filled in the shallow trench；It is etched back to remove the sacrificial layer；Remove second hard mask layer；Remove first hard mask layer；Tunnel oxide layer is formed in the semiconductor substrate of exposing；Floating gate material layer is formed on the semiconductor substrate；Execute flatening process.Production method according to the present invention provides formation of the good process window for fleet plough groove isolation structure oxide skin(coating) and floating gate polysilicon；The profile of floating grid has been well controllled；The physical contours of floating grid are conducive to improve device coupling efficiency. |
| priorityDate | 2014-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.