http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105448716-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate | 2014-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105448716-B |
| titleOfInvention | The manufacturing method of transistor based on metallic nanodots raceway groove and obtained product |
| abstract | The invention discloses the manufacturing method of the transistor based on metallic nanodots raceway groove and obtained products.The raceway groove with metallic nanodots can be manufactured by this method, to obtain the transistor without using semiconductor.This method includes：A method of the fin formula field effect transistor based on metallic nanodots raceway groove is formed, including：Fin structure is formed on substrate；Insulating layer is formed on the fin structure surface；The gap between the fin structure is filled using gap fillers；The top of the exposure fin structure；Metallic nanodots array is formed on the top of the gap fillers and the fin structure；And the metallic nanodots on the removal gap fillers and the gap fillers, to form the structure with metallic nanodots only at the top of the fin structure. |
| priorityDate | 2014-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.