http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105448716-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_429245cd41c2f78dfbb5d4075baae975 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| filingDate | 2014-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1edfc0c1b19e0c1e6df7d0cebafda23a |
| publicationDate | 2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105448716-A |
| titleOfInvention | Method for manufacturing transistor based on metal nano-dot trench, and prepared product |
| abstract | The invention discloses a method for manufacturing a transistor based on a metal nano-dot trench, and a prepared product. The method can manufacture a trench with a metal nano dot, thereby obtaining a transistor which is prepared without a semiconductor. The method comprises the steps: forming fin-shaped structures on a substrate; forming insulating layers on the surfaces of the fin-shaped structures; filling a gap between the fin-shaped structures with gap filling materials; exposing the tops of the fin-shaped structures; forming a metal nano dot array at the tops of the gap filling materials and the fin-shaped structures; and removing the gap filling materials and the metal nano dots on the gap filling materials, so as to form a structure which is only provided with the metal nano dots at the tops of the fin-shaped structures. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107293586-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107492493-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107293586-A |
| priorityDate | 2014-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.