http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105439126-B

Outgoing Links

Predicate Object
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-186
filingDate 2014-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105439126-B
titleOfInvention A kind of grade single crystal graphene preparation method
abstract The invention belongs to advanced carbon material and semiconductor process technique field, more particularly to a kind of simplicity of large area single crystal graphene, stable preparation method, suitable for the preparation of grade single crystal graphene.The present invention is at 1000 DEG C with methane(CH 4 )It is that reducibility gas grows single crystal graphene using low-pressure chemical vapor deposition (LPCVD) method for carbon source, hydrogen.The present invention is ultrasonically treated without carrying out acetone, ethanol etc. to copper foil, it the preprocessing process such as need not be polished to copper foil using complicated electrochemical method, without the annealing process up to a few hours, high hydrogen flowing quantity, only need to take out the air in most reactor before heating and ensure there is no gas to be passed through in temperature-rise period, nucleation density of the graphene on copper foil can be greatly lowered by this convenient disposal method, and the single crystal graphene that opposite side distance reaches 1mm sizes need to can be only grown by the growth time of 23 hours.The scanned electron microscope of sample(SEM), transmission electron microscope(TEM), Raman spectrum analysis(Raman)Single crystal graphene is proved etc. means sign and there is the defects of less.
priorityDate 2014-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 35.