http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105439106-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0bc05af7739d6324cb919a0bde0cc625 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2217-289 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B19-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B19-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34 |
| filingDate | 2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_699c54bf9a9d755dffdde70cd219459a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9ba9253d3077ad0aed2947dbee694f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57e109d458f23ee2823dd89575939a33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d88892214b46594518f1e836958a45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11a5e526fc1974a6155e7330f8864046 |
| publicationDate | 2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105439106-A |
| titleOfInvention | A method for preparing bismuth selenide thermoelectric thin film with bismuth sulfate |
| abstract | A method for preparing bismuth selenide thermoelectric thin film with bismuth sulfate belongs to the technical field of thermoelectric thin film material preparation. The present invention is obtained through the following steps. First, the tin dioxide conductive glass substrate is cleaned, and then Bi 2 (SO 4 ) 3 , SeO 2 Put it into dilute nitric acid, use the electrodeposition method to obtain a precursor film on a conductive glass sheet, dry it naturally, put it into a tube furnace with hydrazine hydrate, so that the precursor film sample does not contact with hydrazine hydrate, and place it in a closed heating in a tube furnace, and finally taking out the sample for drying to obtain a bismuth selenide thermoelectric thin film. The invention does not require high vacuum conditions, has low requirements on instruments and equipment, low production cost, high production efficiency and is easy to operate. The obtained bismuth selenide thermoelectric thin film has good continuity and uniformity, and the main phase is Bi 2 Se 3 phase, which can realize low-cost large-scale industrial production. |
| priorityDate | 2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.