http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105436712-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-402 |
| filingDate | 2015-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105436712-B |
| titleOfInvention | The fragility splinter method and system of a kind of brittle semiconductor materials |
| abstract | The invention discloses the fragility splinter method and system of a kind of brittle semiconductor materials, methods described includes：Sliver part interior, which quickly heats, to be treated to brittle semiconductor materials using heating laser beam, so that brittle semiconductor materials treat that sliver part interior expands to form compression, sliver portion faces, which are quickly cooled down, to be treated to brittle semiconductor materials simultaneously, so that brittle semiconductor materials treat that sliver portion faces shrink to form tension, so that brittle fracture occurs for brittle semiconductor materials, smooth incisions are formed.Pass through the present invention, ideally brittle semiconductor materials sliver can be processed, relative to the processing mode of traditional brittle semiconductor materials, high kerf quality can be obtained, the bending strength of brittle semiconductor materials is maintained, improves the sliver efficiency of brittle semiconductor materials. |
| priorityDate | 2015-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.