http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105428476-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c61b226ac11f597ef5a304eda5aeb7b6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_515cb3a3cda82c28d6994532a68b4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9f0f8d8b8e0f4b7ab3b5d7de4ed44b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5c540fafbbb399f1b0ec02943cef571 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e051a5c6bf382d4a4794c24cdbe089 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b32cffa313f8c5d7cf65f11269946b8f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f9d387fb772b3c3694c13f9877b158b |
| publicationDate | 2016-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105428476-A |
| titleOfInvention | Epitaxial structure with electron blocking layers and hole adjusting layers |
| abstract | The invention provides an epitaxial structure with electron blocking layers and hole adjusting layers. The epitaxial structure comprises a buffer layer, an N type doped epitaxial layer, a light-emitting layer and a P type doped epitaxial layer from the bottom up in sequence; the epitaxial structure is characterized in that a P type doped hole injection layer made of Al<x0>In<y0>Ga<1-x0-y0>N and a multi-layer structure formed by laminating a plurality of sub combined layers are further arranged between the light-emitting layer and the P type doped epitaxial layer, wherein each sub combined layer comprises the electron blocking layers made of Al<x1>In<y1>Ga<1-x1-y1>N and the hole adjusting layers made of Al<x2>In<y2>Ga<1-x2-y2>N; y0 is greater than x0, and x0 is greater than 0; x1 is greater than y1, and y1 is greater than 0; x2 is greater than or equal to y2,and y2 is greater than 0; x1 is greater than x2, and x2 is greater than or equal to x0; and y0 is greater than y2, and y2 is greater than y1. P type impurities in the hole injection layers enter the sub combined layers close to the hole injection layers under the action of a delay effect and the diffusion action of subsequent high temperature; the contents of aluminum and indium in the multi-layer structure are adjusted to form good electron blocking performance; the resistance value is reduced; effective hole injection sources are provided; and the anti-static performance of chips is improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111081836-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108538973-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017107552-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107591466-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111554782-A |
| priorityDate | 2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.