http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105408741-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate | 2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105408741-B |
| titleOfInvention | Integrated sensor device for charge detection |
| abstract | According to the first aspect of the invention, provide a kind of integrated sensor device based on semiconductor, comprising: the lateral isolation grid field effect transistor (MOSFET) being connect with the base series of vertical bipolar junction transistor (BJT), wherein the drain-drift region of the MOSFET is a part of the base area of the BJT in semiconductor substrate, therefore it is in electrical contact with the base stage of BJT, and the drain-drift region of MOSFET is more than the fore-and-aft distance between emitter and any buried layer as collector at a distance from BJT emitter, and the breakdown voltage of described device is determined by the BVCEO of longitudinal BJT. |
| priorityDate | 2013-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.