http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105399061-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B19-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 |
| filingDate | 2015-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105399061-B |
| titleOfInvention | A kind of preparation method of one-dimensional tin selenide monocrystal nanowire |
| abstract | The invention discloses a kind of preparation method of one-dimensional tin selenide monocrystal nanowire; SnSe powder is placed in high-temperature resistant container; and put it into high temperature resistant boiler tube; boiler tube is put into vacuum tube furnace; base material with catalyst is placed in the boiler tube, closed boiler tube, makes to be in anaerobic vacuum state inside the boiler tube; protective gas is passed through afterwards, and adjusts intraductal pressure to 10 50 Torr；Open heater, the central high temperature area of the vacuum tube furnace is heated to 550 650 DEG C, mobile boiler tube pipe, the high-temperature resistant container in the placement source is located at central high temperature area, the substrate with catalyst and be located at low-temperature region, stopping heating obtaining one-dimensional inorganic nanometer wire structural material after the completion of maintenance said temperature treats nanowire growth.The method of SnSe nano wires prepared by the method is simple, practical, and product component is single, and the length of obtained SnSe nano wires, diameter are easily controlled, and yield is high. |
| priorityDate | 2015-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.