http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105388407-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105388407-B |
| titleOfInvention | The integrality detection method of gate dielectric layer |
| abstract | Present invention is disclosed a kind of integrality detection methods of gate dielectric layer, including：One sample to be tested is provided, the sample to be tested includes active area and the gate electrode structure and dielectric layer that are formed on the active area, the gate electrode structure includes stacking the gate dielectric layer and gate electrode being set on active area, and the dielectric layer exposes the surface of the gate electrode；An electrolytic cell is provided, the electrolytic cell includes power supply, electrolytic cell anode and electrolyte, and the anode of the power supply connects the electrolytic cell anode；The active area is electrically connected with the cathode of the power supply；The gate electrode and the electrolytic cell anode are immersed in the electrolyte；If the surface of a certain gate electrode generates displacement metal, the gate dielectric layer failure between a certain gate electrode and active area is judged.It can rapidly and accurately judge whether gate dielectric layer is complete using the integrality detection method of gate dielectric layer provided by the invention, and the position of the transistor of failure can be precisely located. |
| priorityDate | 2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.