http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105378895-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K2003-329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-80 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1876 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-102 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-103 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate | 2014-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105378895-B |
| titleOfInvention | The manufacture method of impurity diffusion composition and semiconductor element |
| abstract | The present invention provides a kind of impurity diffusion composition, and it contains the polysiloxanes and (B) impurity diffusion component of (A) formula (1) expression.(in formula, R 1 Represent the aryl that carbon number is 6~15, multiple R 1 Can be identical or different respectively.R 2 Represent that acyl group, carbon number that alkenyl, carbon number that alkoxy, carbon number that alkyl, carbon number that hydroxyl, carbon number are 1~6 are 1~6 are 2~10 are 2~6 are any of 6~15 aryl, multiple R 2 Can be identical or different respectively.R 3 And R 4 Represent that alkenyl, carbon number that alkoxy, carbon number that alkyl, carbon number that hydroxyl, carbon number are 1~6 are 1~6 are 2~10 are any of 2~6 acyl group, multiple R 3 And R 4 Can be identical or different respectively.n:M=95:5~25:75.).The impurity diffusion composition has excellent printing, impurity diffusion to Semiconductor substrate, and burns till, crackle is not likely to produce in diffusing procedure, is formed after burning till and burns till film for what other impurities diffusant had a sufficient sheltering. |
| priorityDate | 2013-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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