| abstract |
Conductors provided in the interconnection layer are allowed to have low resistance. An insulator film composed of SiO (1-x) Nx (where x>0.5 in the XRD analysis results) is provided over the substrate. An interconnect is provided over the insulator film, the interconnect including a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having lower resistance than the first layer, such as W. |