http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105355540-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2010-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105355540-B |
| titleOfInvention | Semiconductor devices and its manufacture method |
| abstract | The present invention provides a kind of semiconductor devices and its manufacture method, and the element separation that the semiconductor devices includes preventing to have undesirable effect the electrical characteristics of semiconductor element constructs.The thickness for the silicon oxide film 9 that the Film Thickness Ratio of the silicon oxide film 9 remained in the shallow groove isolation structure of width relative narrower is remained in the relatively wide shallow groove isolation structure of width is thin.The thinning amount of silicon oxide film 9, for the laminated thickness using the higher silicon oxide film 10 (upper strata) of the compression stress of HDP CVDs formation on the silicon oxide film 9 of lower floor.Finally it is further improved the compression stress for the element isolating oxide film to be formed in the shallow groove isolation structure of width relative narrower. |
| priorityDate | 2009-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.