| abstract |
The present invention, which provides, does not use gallium nitride molding and its manufacturing method and gallium nitride sputtering target material of special device, high density and hypoxemia amount.According to second embodiment, a kind of gallium can be obtained and be impregnated with gallium nitride molding, which is characterized in that it includes gallium nitride phase and gallium phases existing in the form of respective phase, and the molar ratio of Ga/ (Ga+N) is 55% or more and 80% or less. |