http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105336879-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-15 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate | 2015-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105336879-B |
| titleOfInvention | Preparation method of QLED and QLED display device |
| abstract | The present invention provides a method for preparing a QLED, comprising the following steps: providing an anode; providing a mixed solution containing a quantum dot luminescent material and a hole transport material, and the mixed solution includes a first solvent and a second solvent, wherein , the solubility of the first solvent to the quantum dot luminescent material is > 10 mg/ml, the solubility to the hole transport material is < 0.1 mg/ml, and the boiling point of the first solvent is > 200°C, the second The boiling point of the second solvent is less than 150°C; the mixed solution is printed on the anode to form a semi-cured mixed film; a third solvent with a boiling point of less than 100°C is coated on the surface of the semi-cured mixed film to make the semi-cured The mixed film forms a sequentially stacked hole transport layer and quantum dot light-emitting layer on the anode, wherein the third solvent is miscible with the first solvent and does not dissolve the hole transport material; A cathode is deposited on the dot light-emitting layer. |
| priorityDate | 2015-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.