http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105336688-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate | 2014-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105336688-B |
| titleOfInvention | The forming method of semiconductor structure |
| abstract | A kind of forming method of semiconductor structure, including：Semiconductor substrate is provided, including first area and second area；The surface of first dummy grid of formation covering part first area and the device layer of covering part second area, the first dummy grid and device layer flushes；Dielectric layer is formed in semiconductor substrate surface, the surface of dielectric layer is flushed with the surface of the first dummy grid, device layer；The first dummy grid is removed, forms the first groove；The first metal layer of full first groove of filling is formed on the first groove inner wall, dielectric layer and device layer；Using chemical mechanical milling tech; first planarization process is carried out to the first metal layer; removal is positioned at dielectric layer and the first metal layer of device layer surface; first grid is formed in the first groove; in the lapping liquid that first planarization process uses there is protective agent, protective layer is formed on the surface of the device layer in planarization process.The above method can be during first grid be formed, and the surface for making device layer is injury-free. |
| priorityDate | 2014-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.