http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105336660-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2014-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105336660-B |
| titleOfInvention | Semiconductor devices and forming method thereof |
| abstract | The forming method of a kind of semiconductor devices and forming method thereof, wherein semiconductor devices includes：The substrate for including first area and second area is provided；The groove for including first part and second part is formed in substrate；The first barrier layer is formed on first part's bottom and side wall surface of groove, the first barrier layer captures lattice vacancy defect or interstitial atom defect in substrate；Form the second barrier layer on the second part bottom and side wall surface of the groove, lattice vacancy defect or interstitial atom defect in second barrier layer capture substrate, and type difference the defects of the first barrier layer capture with the second barrier layer；Form the dielectric layer of the full groove of filling；The first well region is formed in the substrate of first area；The second well region is formed in second area substrate, and the second well region is opposite with the doping type of the first well region.It is of the invention effectively prevent in the first well region and in the second well region Doped ions diffusion, make semiconductor devices that there is good electric isolution performance. |
| priorityDate | 2014-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.