http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105321846-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2014-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105321846-B |
| titleOfInvention | Substrate board treatment and substrate processing method using same |
| abstract | The present disclosure generally relates to substrate board treatment and substrate processing method using same.The substrate processing method using same of one embodiment of the present invention includes：The step of top alternating layer provided in polysilicon repeatedly has interlayer insulating film with sacrifice layer, forms porose substrate in such interlayer insulating film and such sacrifice layer；The step of the first process gas for plasma-based state at the top of the side in the hole and bottom and the substrate to form protective layer is excited to the supply substrate；The step of the second process gas for plasma-based state being excited to the supply substrate to remove the protective layer of the side in hole formation；The step of the 3rd process gas for plasma-based state being excited to the supply substrate to remove the sacrifice layer for the side for being exposed to the hole；And excite the step of the 4th process gas for plasma-based state from the bottom at the top of the substrate and the hole to remove the protective layer to the supply substrate. |
| priorityDate | 2014-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.