http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105304614-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2014-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105304614-B |
| titleOfInvention | A kind of test structure and test method |
| abstract | The present invention provides a kind of test structure, including substrate layer and several the first discrete interlayer metal layers, is electrically connected by several first contact plungers between the first interlayer metal layer and the substrate layer；The test structure further includes a second continuously distributed interlayer metal layer, and the second interlayer metal layer is electrically connected by several second contact plungers with the first interlayer metal layer.First interlayer metal layer is connected to by the second contact plunger on a second big interlayer metal layer by the present invention, achievees the effect that ground connection, after enhancing metal connection of broken lines, the potential difference on the first contact plunger surface；Utilize scanning electron microscope voltage-contrast principle, the bright-dark degree of the first contact plunger it can reflect whether the first contact plunger contacts with the first interlayer metal layer from wafer rear, defective locations can be quickly positioned, reflect processing procedure defect, and realize the purpose of early defect monitoring. |
| priorityDate | 2014-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.