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filingDate 2014-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105280699-B
titleOfInvention Source/drain structures and forming method thereof
abstract The present invention provides semiconductor devices, which includes being arranged on the gate stack above substrate and source/drain (S/D) component being partially embedded into the substrate of adjacent gate stack.S/D components include:First semiconductor material layer and the second semiconductor material layer being arranged on above the first semiconductor material layer.Second semiconductor material layer is different from the first semiconductor material layer.S/D components also include being arranged on the 3rd semiconductor material layer above the second semiconductor material layer, and the 3rd semiconductor material layer includes tin (Sn) material.The present invention also provides the forming methods of S/D components.
priorityDate 2014-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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