| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate |
2015-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-105280690-B |
| titleOfInvention |
Semiconductor device |
| abstract |
The invention discloses a technology that can improve the electromigration endurance of an electrode. A portion of the drain electrode (DE) is formed in the side surface (DSF) of the drain pad (DP). At this time, the drain electrode (DE) and the drain pad (DP) are integrally formed, and extend in the first direction (y direction) from the side surface (DSF) in plan view. The recessed portion (DRE) is located on a region overlapping the drain electrode (DE) in plan view. At least a part of the drain electrode (DE) is buried in the recess (DRE). Viewed in the first direction (y-direction), the side surface (side surface RDS) of the recess (DRE) facing the drain pad (DP) is embedded in the drain pad (DP). |
| priorityDate |
2014-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |