http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105264668-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13069 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105264668-B |
| titleOfInvention | Semiconductor device |
| abstract | Disclose semiconductor device.An embodiment of the invention provides a kind of semiconductor device using oxide semiconductor, which realizes micromation while maintaining good electrical characteristics.In the semiconductor device, oxide semiconductor layer is surrounded by the insulating layer comprising the pellumina containing superfluous oxygen.The heat treatment in manufacturing process that the superfluous oxygen that pellumina is included passes through semiconductor device is supplied to the oxide semiconductor layer for wherein forming channel.And, since pellumina has the block to oxygen and hydrogen, so oxygen can be inhibited to be mixed into oxide semiconductor layer from the impurity such as the oxide semiconductor layer disengaging surrounded by the insulating layer comprising pellumina and hydrogen, it is possible thereby to make oxide semiconductor layer high-purity intrinsicization.In addition, threshold voltage is well controllled by the gate electrode layer that on the upside of oxide semiconductor layer and downside is arranged in. |
| priorityDate | 2013-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 75.