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publicationDate 2016-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105226060-A
titleOfInvention Semiconductor device
abstract The present invention relates to semiconductor devices. A semiconductor device having a capacitor comprising a first electrode electrically connected to a transistor and a second electrode separated from the first electrode and covered with an interlayer insulating film, wherein a plurality of connection holes are formed in the interlayer insulating film and at a lower end In contact with the second electrode; and, when the capacitance of the second electrode is represented by C[nF] and the total area of the lower end of the connection hole is represented by A[μm 2 ], the following expression (1) is satisfied, C/A≤ 1.98 [nF/μm 2 ] (1). Elution of the second electrode constituting the capacitor at the lower end of the connection hole is suppressed.
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priorityDate 2014-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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