http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105224125-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F3-041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
| filingDate | 2014-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105224125-B |
| titleOfInvention | A kind of method performed etching to ito film |
| abstract | The invention discloses a kind of method performed etching to ito film, including being that the plate surface that ito film is formed uniformly coats one layer of dry-film resist to surface, the sheet material Drying and cooling of dry-film resist will be coated to room temperature, then sheet material is exposed and development treatment, processing is finally performed etching to sheet material using etching liquid, after etching terminates, cleaned and dried.Etching liquid is by 1,2 ethionic acids, trifluoromethane sulfonic acid, the methene Alendronate of ethylene diamine four, oxalic acid and distilled water composition.Trifluoromethane sulfonic acid is most strong organic acid in above-mentioned raw materials, etch rate is improved by the various sour mix and match of appropriate ratio, the methene Alendronate of ethylene diamine four has extremely strong complexing, can effective each metal ion of stable complexation, 1st, 2 ethionic acids and trifluoromethane sulfonic acid can effectively solve the problems, such as that metal ion is easy to form residue with oxalic acid precipitation, meanwhile the etching liquid will not produce bubble in etching process, etching precision is greatly improved. |
| priorityDate | 2014-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.