http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105220130-B

Outgoing Links

Predicate Object
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
filingDate 2015-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105220130-B
titleOfInvention The method for preparing nano-multilayer film based on low-voltage plasma chemical vapor deposition
abstract The present invention, which discloses one kind, can accurately control every layer thickness and the uniformity, increase the method for film layer and the low-voltage plasma chemical vapor deposition of substrate adhesive power, steps are as follows for this method:A. substrate work-piece is placed in reaction chamber, and reaction chamber is vacuumized;B. oxygen is injected after vacuumizing into reaction chamber, opens microwave source, microwave provides ionized oxygen molecule into reaction chamber after ECR microwave electron cyclotron resonances, and surface activation processing and purifying processing are carried out to matrix;Alternately ionization TiCl 4 The mixed gas of gas and oxygen and the mixed gas of hexamethyldisiloxane gas and oxygen, in workpiece surface alternating deposit multilayer TiO 2 And SiO 2 Film.
priorityDate 2015-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24193

Total number of triples: 18.