| abstract |
Compounds exhibiting high hole mobility and/or high glass transition temperatures are provided, the compounds having the formula [Ar 1 ] m [Ar 2 ] n , wherein: m is an integer from 1 to 3, and n is an integer and can be is 1 or 2; according to claim 1. This compound can be used in the electron transport layer and can be doped with p-type dopants. They can be incorporated into OLEDs, organic photovoltaic devices, imaging elements and thin-film transistors. |