http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105144357-B
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-191 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-15 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368 |
filingDate | 2014-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2017-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2017-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-105144357-B |
titleOfInvention | Formation method of organic semiconductor film |
abstract | The present invention provides a method for forming an organic semiconductor film capable of stably forming an organic semiconductor film having good crystallinity and high mobility. In the formation of the organic semiconductor film in the present invention, the cover member is covered to the upper part of the formation position of the organic semiconductor film on the surface of the substrate, and the above-mentioned cover member has a restricting surface that is separated from the substrate in one direction and forms a convex space, so as to satisfy the specified requirements. Conditionally, a solution is filled between the lid member and the substrate, and the solution is dried, thereby forming an organic semiconductor film. Thus, an organic semiconductor film having good crystallinity is formed using a solution in which the organic semiconductor material is dissolved. |
priorityDate | 2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.